Mild Acid Hardened Photoresist Stripper

a) Broad-Spectrum photoresist Removal Capability

• Applicable to Both Positive and Negative Photoresists‌: Demonstrates particular expertise in handling stubborn residues after ashing, curing, and carbonization.

b) Mild Acid Formula

• pH Value‌: Ranges between 3-5, avoiding corrosion to metal layers such as Al, Cu, Ti, and compound semiconductors like GaAs.

c) Environmentally Friendly and Safe

• Halogen-Free and Fluorine-Free‌: Complies with environmental regulations such as RoHS and REACH.

• Low Volatility and Low VOC‌: Non-toxic and non-flammable, reducing workplace hazards and safeguarding operator health.

d) Process Efficiency

• Wide-temperature Applicability (25°C–90°C): Low-temp stable for MEMS/advanced packaging, high-temp resistant for EUV.

• Efficient Penetration‌: Exhibits excellent solubility for highly crosslinked photoresists (e.g., SU-8) and carbonized negative photoresists.

• Simplified Process‌: A single product capable of dual photoresist compatibility, reducing production line switching time, avoiding cross-contamination, and extending equipment lifespan.

a) Silicon-Based Chips‌

Compatible with Si/SiO₂/SiN, protecting Cu/Al interconnection layers.

b) GaAs/GaN Devices‌

Mild acid formula prevents corrosion of Au/Ti electrodes.

c) Power Semiconductors‌

Efficiently removes SiC high-temperature carbonized photoresist, protecting Al layers.

d) Advanced Packaging‌

Simultaneously cleans TSV residue and PI passivation layers.

e) MEMS Sensors‌

Removes deep silicon etch residue without corroding Au pads.

f) Flexible Electronics‌

Compatible with PI/PET substrates without damaging nano-silver wires.

a) Applicable Cleaning Methods

• Recommended‌: Hot soaking

• Other methods include ultrasonic, spraying, and brushing.

b) Temperature and Time

• Temperature Range‌: 25°C – 90°C (heating accelerates cleaning).

• Standard Cleaning‌: 3 – 15 minutes per tank (using neat solution).

• Stubborn Residue‌: Can be extended up to 30 minutes.

c) Key Operating Instructions

• Use Neat Solution‌: No dilution required.

• Maintain Set Temperature‌: After immersing wafers in the stripping solution.

• Adjust Time Based on photoresist Thickness/Carbonization Degree‌.