Mild Acid Hardened Photoresist Stripper

a) Broad-Spectrum photoresisist Capability

• Masu amfani ga Dukansu Madaidaitan Hoto masu Kyau da Mara kyau: Yana Nuna ƙwarewa ta musamman wajen sarrafa ragowar taurin kai bayan toka, warkewa, da carbonization.

b) Formula Acid mai laushi

• pH Value‌: Rage tsakanin 3-5, guje wa lalata zuwa yadudduka na ƙarfe kamar Al, Cu, Ti, da na'urori masu haɗaka kamar GaAs.

c) Abokan Muhalli da Amintacce

• Halogen-Free da Fluorine-Free‌: Ya bi ka'idodin muhalli kamar RoHS da REACH.

• Low Volatility da Low VOC‌: Ba mai guba da mara ƙonewa, rage haɗarin wurin aiki da kiyaye lafiyar ma'aikaci.

d) Ingantaccen Tsari

• Aiwatar da Zazzabi mai faɗi (25°C – 90°C): Tsayayyen yanayin zafi don MEMS/marufi na ci gaba, mai tsananin zafi don EUV.

• Ingantacciyar Shiga: Yana Nuna kyakkyawar solubility don masu ɗaukar hoto masu alaƙa da juna (misali, SU-8) da masu ɗaukar hoto mara kyau na carbonized.

• Tsari Sauƙaƙe: Samfuri ɗaya wanda ke iya daidaita daidaiton hoto mai dual, rage lokacin sauya layin samarwa, guje wa gurɓatawa, da tsawaita rayuwar kayan aiki.

a) Chips na tushen Silicon

Mai jituwa tare da Si/SiO₂/SiN, yana ba da kariya ga yaduddukan haɗin gwiwar Cu/Al.

b) GaAs/GaN Devices

Tsarin acid mai laushi yana hana lalata na'urorin lantarki na Au/Ti.

c) Semiconductors

Da kyau yana cire SiC babban zafin jiki na carbonized photoresist, yana kare Al yadudduka.

d) Babban Marufi

A lokaci guda yana tsaftace ragowar TSV da PI passivation layers.

e) Sensors na MEMS

Yana kawar da ragowar silicon etch mai zurfi ba tare da lalata faifan Au ba.

f) Kayan Wutar Lantarki Mai Sauƙi

Mai dacewa da PI/PET ba tare da lalata wayoyi na nano-azurfa ba.

a) Hanyoyin Tsaftace Masu Aikata

• Nasiha: Jiƙa mai zafi

• Sauran hanyoyin sun haɗa da ultrasonic, spraying, da brushing.

b) Zazzabi da Lokaci

• Yanayin Zazzabi‌: 25 ° C - 90 ° C (dumi yana haɓaka tsaftacewa).

• Daidaitaccen Tsaftacewa: 3 - 15 mintuna kowane tanki (ta amfani da ingantaccen bayani).

• Ragowar Tauri: Ana iya tsawaita har zuwa mintuna 30.

c) Maɓallin Umarnin Aiki

• Yi amfani da Magani mai Kyau: Ba a buƙatar ruwa mai narkewa.

• Kula da Saita Zazzabi‌: Bayan nutsar da wafers a cikin maganin cirewa.

• Daidaita Lokaci Dangane da Kauri / Digiri na Carbonization‌ Photoresist.