2025 WESEMIBAY Haskaka: 3rd/4th Gen Semiconductor Trends & Daidaitaccen Tsaftacewa

Gabatarwa

2nd Bay Area Semiconductor Industry Ecology Expo (WESEMIBAY 2025) ya faru a Shenzhen Convention and Exhibition Center (Futian) daga Oktoba 15 zuwa 17, 2025. Rufe a kan 60,000 murabba'in mita, da nuni janyo hankalin fiye da 600wel manyan kamfanoni da cibiyoyi, 600 kwararrun masana'antu da cibiyoyi daga 20+ kasashe. Karkashin taken ''Semiconductor Yana Karfafa Gaba, Innovation Yana Gina Ilimin Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halittar Halitta,''''''''''''''''''''''')'’’.

Duk da haka, waɗannan ci gaban suna kawo ƙalubale mai mahimmanci amma ba a magance su ba: tsarin tsaftacewa na gargajiya yana gwagwarmaya don daidaita 'cirewa saura' da 'kariyar kayan aiki.' Misali, matsananciyar kaushi sukan lalata na'urori masu auna sigina na 4th-gen, yayin da rashin cikar cire kakin zuma na 8-inch SiC wafers kai tsaye yana rage yawan amfanin ƙasa. Wannan labarin yana nazarin mahimman abubuwan masana'antu daga WESEMIBAY 2025, yayi nazarin yadda daidaitattun fasahohin tsaftacewa ke magance waɗannan abubuwan zafi, da kuma haɗa ra'ayoyi kan fa'ida da bayanan ingantaccen fasaha.

1. Mahimman Abubuwan da Aka Bayyana a WESEMIBAY 2025

(1) Trend 1: 8-inch SiC/GaN Wafers Shiga Mahimman Matsayin Samar da Jama'a

WESEMIBAY 2025 a fili ta nuna alamar canji a cikin na'urori na zamani na 3 daga 'mamakanin inch 6' zuwa 'Ma'auni 8-inch.' Cibiyar Fasaha ta Kasa don Wide BandGap Semiconductor (Shenzhen) ta nuna 8-inch na SiC/GaN matukin jirgi a wurin baje kolin, tare da kayan aiki da kayan aiki. (Ga-O) da gallium-nitrogen (Ga-N) lahani don tabbatar da amincin na'urar'-bayani da ke nuna kai tsaye ga buƙatar mafi sauƙi, daidaitattun hanyoyin tsaftacewa.

CR Micro (China Resources Microelectronics) ya kara tabbatar da wannan yanayin ta hanyar nuna 8-inch wafers, tare da alamar lura: 'Muna ba da sabis na masana'antar wafer 8 + 12-inch, mai da hankali kan na'urorin wutar lantarki don sabbin motocin makamashi.' Dangane da hasashen masana'antu don 2025 , kasuwar wafer ta duniya ta SiC za ta ga babban ci gaba, tare da 8-inch wafer na jimlar 0% sama da jigilar kaya 15% a cikin 2024. Wannan haɓaka yana daidaitawa da haɓakar masana'antu, kamar Wolfspeed da Infineon yana haɓaka haɓaka ƙarfin 8-inch.

Juyawa zuwa manyan wafers yana haifar da buƙatu mai mahimmanci: tsaftacewa iri ɗaya a duk faɗin wafer. A cikin tattaunawar fasaha ta kan-site tare da injiniyoyin rumbun CR Micro, 'Bambancin saura na kawai 0.1μm tsakanin gefe da tsakiyar 8-12-inch wafers na iya rage yawan amfanin ƙasa da 5-8%.

(2) Trend 2: 4th-Gen Semiconductors Matsar daga R&D zuwa Gwajin Aikace-aikacen

Yayin da 3rd-gen semiconductors ya kasance babban jigon samarwa na yanzu, kayan aikin 4th-gen sun fito a matsayin ''boyayyen haske'' a WESEMIBAY 2025. Cibiyar Fasaha ta Kasa ta Kasa don Wide BandGap Semiconductor (Shenzhen) ta fito fili da aka jera 'antimonide na'urorin' da 'gallium oxide a matsayin maɓalli na R&Gen4 Kayayyaki & Na'urori ' sashe. Masanan Booth sun bayyana cewa: 'Antimonides sun yi fice a cikin ƙaramin ƙarfi, aikace-aikace masu ƙarfi don sararin samaniya da 6G, amma tsarin su mai rauni yana sa su zama masu saurin kamuwa da lalatawar ƙarfi.'

Shenzhen Pinghu Laboratory ya bayyana haka ta hanyar nuna 8-inch Si-based GaN low-voltage wafers, tare da alamun samfurin lura: 'Masu aikin wafer na gaba na 4th-gen zai buƙaci 'maganin tsaftacewa na kariya' wanda ke kawar da kakin haɗin gwiwa ba tare da lalata kayan bandgap mai fadi ba.' Wannan buƙatar ya yi daidai da masana'antu wanda ke buƙatar ci gaban shekaru sama da 2025 na gwaji don ci gaban masana'antu, wanda ya cika shekaru 2025 na gwaji. Kayan semiconductor na 4th-gen, wanda buƙatu ke motsawa daga sassan na'urorin lantarki na musamman.

(3) Trend 3: Dole ne Tsaftace Tsabtace Tsabtace tare da Ƙirƙirar Ƙirƙirar Kayan aiki

Ƙirƙirar kayan aikin masana'antu na semiconductor a WESEMIBAY 2025 ya jaddada buƙatar 'haɗe-haɗe mafita na tsaftacewa.' Xinkailai (jagoran masana'antun kayan aikin gida) ya buga bidiyon talla a rumfarsa, yana mai cewa: 'Duk bayanan da aka nuna na fasaha a cikin bidiyon talla na Xinkailai, ragowar nanoscale na iya samar da ƙarancin ƙarfe bayan babban juriya mai ƙarfi ta hanyar ƙaramar juriya ta hanyar ƙarami mai juriya ta hanyar samar da layi mai ƙarfi. 10-15%' Bidiyon kuma ya jaddada cewa tsaftacewa dole ne a daidaita shi tare da etching da siriri-fim don guje wa gurɓatawa.

Han's Semiconductor ya kara inganta wannan yanayin ta hanyar nuna 'SiC Ingot Laser Slicing & Thinning Integrated Machine.' A cikin cikakkun bayanai na fasaha da aka lakafta akan kayan aikin Han's Semiconductor, na'urar tana buƙatar tsaftacewa a kan wurin bayan yankewa, ba tare da raguwa ba, don inganta aikin tsaftacewa tare da tsaftacewa tare da ma'aunin tsaftacewa. 'Madaidaita da wafers 2-12-12 kuma tabbatar da cire ragowar kayan aiki,' a cewar ma'aikatan rumfar.

Waɗannan abubuwan haɓakawa sun tabbatar da ingantaccen yanayin: tsaftacewa ba mataki ba ne mai zaman kansa amma babban ɓangarorin haɗaɗɗun matakan masana'antu na semiconductor.

2. 3 Mahimman Ƙalubalen Tsabtatawa a cikin Masana'antar Semiconductor

Haɗe tare da tattaunawa tare da masana'antun guntu da masu samar da kayan aiki a wurin baje kolin, abubuwan da ke sama suna fassara zuwa maki uku masu latsawa masu zafi:

(1) Kalubale na 1: Daidaituwar Kayayyaki da yawa

3rd-gen SiC/GaN da 4th-gen antimonides suna da daidaiton sinadarai daban-daban. Mai ƙarfi mai tasiri ga SiC na iya fitar da antimonides, yayin da ƙaramin bayani na antimonides yakan bar ragowar kakin zuma akan SiC. Injiniyoyi a Cibiyar Innovation ta Gen 3rd Gen Semiconductor Innovation Centre sun raba: 'Mun ga lokuta inda masu tsabtace gabaɗaya ke haifar da lahani ga Ga-O akan wafers na GaN, yana rage rayuwar na'urar da kashi 30%.

Bidiyon tallata na Xinkailai kuma ya tabbatar da wannan batu - ragowar abubuwan da ba a cire ba bayan etch na iya yin lahani ga ingancin jigon fina-finai na gaba, wanda zai haifar da juriya mai girma.

(2) Kalubale na 2: Tsaftace Tsabtace Tsabtace don Manyan Wafers

Kamar yadda wafers na 8-12-inch suka zama na yau da kullun, tsaftar daidaiton daidaito ya zama mahimmin abu mai yawan amfanin ƙasa. Per on-site fasaha tattaunawa data tare da CR Micro booth injiniyoyi, 'A tsaftacewa bambanci na 0.5μm tsakanin gefe da tsakiyar 12-inch wafers iya rage yawan amfanin ƙasa da 8-10%' The tsaftacewa kayan aiki tawagar a Han ta Semiconductor lura da cewa gargajiya tsari tsaftacewa tsarin kokawa don kula da barga matsa lamba da sinadarai maida hankali a fadin manyan wafer saman, sau da yawa sakamakon a cikin rece 'sama da cibiya' a kan 'matsakaicin matsakaici' - a kan reshe.

(3) Kalubale na 3: Daidaitaccen Tsaftacewa don Babban Marufi

Yankin Chiplet & Advanced Packaging Zone (wanda SiChip Technology ya shirya) ya nuna kwakwalwan kwamfuta 2.5D/3D. Kowane lakabin da aka nuna a yankin SiChip's Chiplet Zone, 'Ƙananan rata tsakanin mutuwa daban-daban (ƙananan kamar 5μm) tarko mai haɗawa da kakin zuma, wanda mafitacin tsaftacewa na gargajiya ba zai iya kaiwa ba - yana haifar da aikin haɗin gwiwa.' Injiniyoyi na SiChip sun kara da cewa: 'Ragowar ta hanyar-Silicon Via (TSV) na iya haifar da tsaftataccen tsari mai mahimmanci.'

3. Ƙididdigar Ƙaddamarwa don Tsabtace Tsabtace

Don magance waɗannan ƙalubalen, WESEMIBAY 2025 ta ba da haske kan mahimman ƙa'idodin ƙirƙira guda uku don ingantattun fasahohin tsaftacewa - waɗanda ke goyan bayan bayanan gwaji na kan layi da ra'ayin abokin ciniki:

(1) Jagoranci 1: Ƙa'idar Lalacewa-Kyauta don Daidaituwar Abubuwa da yawa

Kare kayan 4th-gen masu rauni yayin cire ragowar daga 3rd-gen semiconductor yana buƙatar tsaka-tsaki, mafita mai tsaftacewa mara kyau. Misali, Shenzhen Yuanan Technology's shara-free tsaftacewa bayani (da farko an ƙera don yumbu anilox Rolls amma ingantacce don aikace-aikacen semiconductor) yana da pH na 6.5± 0.5-kowace bayanan gwajin gida daga dakin gwaje-gwajen fasaha na Shenzhen Yuanan. Wannan tsari na tsaka tsaki yana guje wa lahani Ga-O/Ga-N akan wafers na GaN yayin da yake cire kakin zuma daga SiC da antimonides yadda ya kamata.

Bayanai na gwaji daga masana'antar wafer na SiC na cikin gida sun nuna cewa wannan maganin ya sami nasarar cire kakin zuma na kashi 99.9% akan wafers SiC inch 8 ba tare da lalatawar ƙasa ba. Bugu da ƙari, samfurin ya bi ka'idodin EU REACH (EC) No 1907/2006 da sabbin 'yan takara na Abubuwan Abubuwan Damuwa Mai Girma (SVHC) - jimlar abubuwa 235 kamar na Oktoba 2025-da kuma umarnin RoHS. Wannan ya sa ya dace da sarƙoƙin samar da semiconductor na duniya, mai mahimmanci ga masana'antun APAC waɗanda ke yin niyya ga kasuwannin Turai da Amurka.

Nau'in Material Semiconductor	Kalubalen Tsabtace Mahimmanci	Maganin Matching (Yuanan Chemtech)
Gen 3 - SiC (8/12-inch)	Ragowar kakin zuma & uniformity na tsakiya	Mai tsaftacewa mara lalacewa (pH 6.5 ± 0.5) & ƙirar tashin hankali ƙasa
3rd Gen - GaN	Ga-O/Ga-N lahani	Ruwa mai tsafta, mara lahani
4th Gen - Antimonides	Lalacewar crystal mai rauni	Mai tsabta mai ratsawa mai laushi (shiga cikin mintuna 3-5)

(2) Jagoranci 2: Tsarukan Shiga Tsakanin Maɗaukaki don Daidaituwa

Magance al'amurran da suka dace don manyan wafers na buƙatar tsabtace ruwa don kutsawa cikin ko'ina a saman wafer - gami da gefuna da tsagi. Maganin tsaftacewar fasaha na Shenzhen Yuanan yana amfani da ƙaramin tsari na tashin hankali (≤25 mN/m), wanda zai iya shiga ramuka da gefuna a cikin minti 3-5 (bayanan gwajin cikin gida daga dakin gwaje-gwaje na Shenzhen Yuanan Technology). An inganta wannan aikin ta hanyar gwajin dacewa tare da na'urorin tsabtace ɗaki da yawa na Han's Semiconductor.

Binciken shari'ar abokin ciniki na 2025 ya nuna cewa wannan ikon shigar da shi ya rage saura bambanci tsakanin gefe da tsakiyar wafers 12-inch zuwa ƙasa da 0.05μm, haɓaka yawan amfanin ƙasa da 7% idan aka kwatanta da masu tsabtace gargajiya.

Girman Wafer	Batun Tsabtace Jama'a	Amfanin Magani ( vs. Masu Tsabtace Gargajiya)
8-inch SiC	Gefen ragowar gini	99.9% kakin cire kudi & babu lalata surface
12-inch SiC	> 0.5μm tazarar tsakiya	Sauran bambancin <0.05μm & 7% haɓaka yawan amfanin ƙasa

(3) Hanyar 3: Tsaftace Wuri don Haɗin Tsarin

Daidaita tare da yanayin kayan aiki daga Xinkailai da Semiconductor na Han, dole ne mafita mai tsaftacewa ta goyi bayan 'aiki a kan rukunin yanar gizon ba tare da rarraba wafer ba.' Za a iya amfani da maganin tsaftacewa na Shenzhen Yuanan da hannu ko ta atomatik a kan shafin: ana amfani da shi kai tsaye bayan yankan Laser ko etching, yana rage lokacin aiwatarwa da kashi 30% idan aka kwatanta da tsaftacewa daga shafin.

Wani dakin gwaje-gwaje na R&D na 4th-gen a Shenzhen ya ba da rahoton cewa wannan ikon kan wurin yana kawar da lalacewar wafer yayin sufuri kuma yana tabbatar da tsaftacewa akan lokaci-mahimmanci don gwajin kayan aiki cikin sauri.

4. Hankali na gaba: Fasahar Tsabtace Semiconductor (2026-2030)

Dangane da fahimta daga WESEMIBAY 2025, fasahar tsabtace semiconductor za ta samo asali a cikin mahimman kwatance guda uku cikin shekaru biyar masu zuwa:

1. Tsabtace Matsayin Atomic : Kamar yadda girman transistor ke raguwa zuwa 2nm da ƙasa, tsaftacewa zai buƙaci cire sassan-10nm - suna buƙatar sabbin abubuwa a gano ragowar nanoscale da cirewa.

2. Formula Masu Abokan Hulɗa : Abubuwan Buƙatun ESG na Duniya (Muhalli, Zamantakewa, Mulki) (misali, Dabarun Sustainable Chemicals Strategy na EU) za su fitar da buƙatun hanyoyin tsabtace halittu, ƙananan-VOC (Volatile Organic Compound).

3. Haɗin kai na Smart : Tsarin tsaftacewa na AI-powered zai zama al'ada, daidaita sigogi a cikin ainihin lokacin dangane da kayan wafer da bayanan kayan aiki don rage kuskuren ɗan adam.

Domin Shenzhen Yuanan Technology, za mu ci gaba da mayar da hankali a kan R & D for 3rd / 4th-gen semiconductor fasahar tsaftacewa-tare da tsare-tsaren da za a kaddamar da wani cikakken sarrafa kansa tsaftacewa bayani ga 12-inch SiC wafers a 2026. Our burin shi ne don tallafawa da duniya semiconductor masana'antu ta motsi zuwa ci-gaba kayan yayin da tabbatar da yawan amfanin ƙasa, AMINCI, da kuma yarda.

Wadanne ƙalubalen tsaftacewa na 3rd/4th-gen semiconductor ke fuskantar ƙungiyar ku? Don takamaiman kayan aikin ku na semiconductor, tuntuɓar mu don keɓance maganin tsaftacewa mara lalacewa kuma nemi samfurin kyauta.

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Tambayoyin da ake yawan yi (FAQ)

Q1 : Menene ya sa madaidaicin tsaftacewa mai mahimmanci ga 3rd / 4th-gen semiconductors (SiC / GaN / antimonides)?

A :  3rd-gen SiC/GaN da 4th-gen antimonides suna da lahani na musamman na kayan abu: SiC yana da haɗari ga lahani na sama daga kaushi mai ƙarfi, yayin da sifofin kristal masu rauni na antimonides suna lalata sauƙi. Masu tsabtace al'ada sukan bar sharan kakin zuma (wanda ke haifar da raguwar yawan amfanin ƙasa) ko lalata saman (gajarta rayuwar na'urar). Tsaftace madaidaici yana warware wannan ta hanyar daidaita cirewa kyauta (misali, 99.9% cire kakin zuma akan 8-inch SiC) da kariya ta kayan (tsakaici pH 6.5± 0.5 dabara), kamar yadda aka inganta a WESEMIBAY 2025 ta National 3rd Gen Semiconductor Innovation Center's booth.

Q2 : Shin maganin tsaftacewar ku mara lalata yana aiki don duka 8-inch SiC da 4th-gen antimonide wafers?

A : iya. An tsara maganinmu don dacewa da abubuwa da yawa-an gwada don tsabtace SiC 8-inch lafiya (daidaita da yanayin samar da CR Micro's 8+12-inch a WESEMIBAY) da 4th-gen antimonides (madaidaicin Shenzhen Pinghu Laboratory's 4th-gen R&D mayar da hankali). Kowane bayanan dakin gwaje-gwaje na cikin gida, yana shiga cikin cavities na wafer a cikin mintuna 3-5 (mafi sauri fiye da matsakaicin masana'antu na 10-15 mintuna) kuma yana guje wa lahani na Ga-O / Ga-N, yana sa ya dace da duka abubuwan da aka samar na 3rd-gen da masu tasowa na 4th-gen semiconductors.

Q3 : Ta yaya maganin tsaftacewar ku ke magance matsalolin daidaituwa don manyan wafers 12-inch?

A : Manyan wafers 12-inch suna gwagwarmaya tare da bambance-bambancen tsaftar tsaka-tsaki (wani wuri mai zafi wanda Han's Semiconductor ya haskaka a WESEMIBAY 2025). Maganin mu yana amfani da madaidaicin dabarar tashin hankali (≤25mN/m) don tabbatar da ko da shiga cikin duka wafer. Binciken shari'ar abokin ciniki na 2025 ya nuna yana rage bambance-bambancen tsaka-tsaki zuwa <0.05μm-yanke asarar amfanin gona da kashi 7% idan aka kwatanta da masu tsabtace tsari na gargajiya. Hakanan yana haɗawa tare da injunan tsabtace ɗaki da yawa (kamar samfurin Han's Semiconductor's 4-chamber model) don ayyukan samarwa marasa ƙarfi.

Q4 : Shin maganin tsabtace ku ya dace da ka'idodin duniya (misali, EU REACH, RoHS) don kasuwannin fitarwa?

A : Lallai. Don tallafawa masana'antun APAC da ke niyya kasuwannin Turai da Amurka (maɓalli na WESEMIBAY 2025), maganinmu ya hadu:

• EU REACH Regulation (EC) No 1907/2006 (gami da sabon jerin abubuwan SVHC 235, sabunta Oktoba 2025);

• Umarnin RoHS (babu ƙarfe mai nauyi ko ƙuntataccen VOCs);

• Matsayin masana'antu na SEMI don tsabtace semiconductor.

Wannan bin ka'ida shine babban abin da aka mayar da hankali a cikin tattaunawa tare da masu saye na ketare a dandalin WESEMIBAY's 'Made in China' na fitar da kaya.

Q5 : Ta yaya tsaftacewa a kan yanar gizo ke inganta ingantaccen aiki don slicing SiC ingot (a kowace Han's Semiconductor's WESEMIBAY demo)?

A : Han's Semiconductor's SiC ingot slicing machine (wanda aka nuna a WESEMIBAY) yana buƙatar tsaftacewa bayan yankan ba tare da rarrabuwa ba don guje wa lalacewar wafer. Maganin mu yana ba da damar yin amfani da kan-site, manual/mimi-mai sarrafa kansa-wanda aka yi amfani da shi kai tsaye bayan slicing, yana kawar da buƙatar jigilar wafers zuwa wuraren tsaftacewa na waje. Wannan yana yanke lokacin aiwatarwa da kashi 30% (kowane ra'ayin Shenzhen 4th-gen R&D lab) kuma yana rage lahani masu alaƙa da sufuri, daidai da yanayin kayan aikin WESEMIBAY ' haɗaɗɗiyar masana'anta.